Recombination centre

In fast recovery diode production , the method to reduce minority carrier lifetime and to shorten switching speed is to introduce recombination centre into the device .

在快恢复二极管的制造中，减小器件少子寿命，提高器件开关速度的方法是在器件内部引入复合中心。

In this paper , the steady-stale photoluminescence , transient photoluminescence and Fourier-transform infrared spectra on Cu-porous silicon are reported . The role of nonradiative recombination centre played by Cu induced surface electronic states is discussed .

本文报道了铜－多孔硅的稳态光致发光，瞬态光致发光和傅里叶变换红外光谱的研究，讨论了铜在多孔硅表面吸附产生的表面电子态所起的非辐射复合中心的作用。

Study of Recombination Centre Levels In N-Type LPE GaAs Layers Irradiated by Electrons

电子辐照N型LPE-GaAs层中复合中心能级的研究